Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
نویسندگان
چکیده
منابع مشابه
Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension a...
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A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...
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ژورنال
عنوان ژورنال: Electronics
سال: 2019
ISSN: 2079-9292
DOI: 10.3390/electronics8050538